A 5Gb/s 16×16 Si-bipolar crosspoint switch
- Hyun Shin
- James Warnock
- et al.
- 1992
- ISSCC 1992
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22 results for Nicholas J. Mazzeo
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
Elecromigration damage in fine Al alloy lines due to interfacial diffusion
- C.-K. Hu
- M.B. Small
- et al.
- 1993
- MRS Proceedings 1993
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
Two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM
- D. Moy
- M. Schadt
- et al.
- 1989
- VMIC 1989
High-sensitivity silicide films for optical recording
- K.Y. Ahn
- T.H. Distefano
- et al.
- 1982
- CLEO 1982
Influence of NiFe quality on bubble devices
- M.S. Cohen
- G.W. Beall
- et al.
- 2008
- Journal of Applied Physics
Abstract: Magnetic properties and domain structures in narrow NiFe stripes
- M.H. Kryder
- K.Y. Ahn
- et al.
- 2008
- Journal of Applied Physics