Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
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49 results for J. Freeouf
Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- J. Freeouf
- Alan C. Warren
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers
- J. Freeouf
- D.A. Buchanan
- et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- J. Freeouf
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layers
- J. Freeouf
- J.C. Tsang
- et al.
- 1990
- Physical Review Letters
The analysis of complex samples by spectroscopic ellipsometry
- J. Freeouf
- 1990
- Applied Surface Science
The electronic properties and control of semiconductor interfaces
- J. Woodall
- P.D. Kirchner
- et al.
- 1990
- Corrosion Science
Application of spectroscopic ellipsometry to complex samples
- J. Freeouf
- 1988
- Applied Physics Letters