Process Damage and Contamination Effects for Shallow Si Implanted GaAs
- H. Baratte
- A.J. Fleischman
- et al.
- 2019
- JES
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58 results for F. Cardone
Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall Reactor
- T.F. Kuech
- M.A. Tischler
- et al.
- 2019
- JES
Quantitative analysis of complex targets by proton-induced x rays
- W. Reuter
- A. Lurio
- et al.
- 2008
- Journal of Applied Physics
Epitaxial small magnetic bubble La-Sm-Lu iron garnet films grown on NdGaG substrates oriented (100) and (111)
- E.A. Giess
- R.J. Kobliska
- et al.
- 2008
- Journal of Applied Physics
LPE Growth and Composition of Magnetic EuTm‐CaGe Iron Garnet Films
- E.A. GIESS
- C.F. GUERCI
- et al.
- 2006
- JACerS
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- K.-L. Lee
- F. Cardone
- et al.
- 2004
- ECS Meeting 2004
20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002