Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
- S.S. Dana
- M. Liehr
- et al.
- 1992
- Applied Physics Letters
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72 results for G.W. Rubloff
Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface
- G. Tas
- R.J. Stoner
- et al.
- 1992
- Applied Physics Letters
Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures
- T.C. Leung
- Y. Kong
- et al.
- 1991
- Applied Physics Letters
SiO2/Si interface properties using positrons
- P. Asoka-Kumar
- K.G. Lynn
- et al.
- 1991
- Physical Review B
Surface etching and roughening in integrated processing of thermal oxides
- M. Offenberg
- M. liehr
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Ultraclean, integrated processing of thermal oxide structures
- M. Offenberg
- M. Liehr
- et al.
- 1990
- Applied Physics Letters
Microvoids and defect chemistry at the SiSiO2 interface studied by positron annihilation depth profiling
- G.W Rubloff
- B Nielsen
- et al.
- 1990
- Vacuum
Defect microchemistry in Si02/Si structures
- G.W. Rubloff
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Microvoids at the SiO2/Si interface
- Bent Nielsen
- K.G. Lynn
- et al.
- 1989
- Physical Review B
Surface analysis of realistic semiconductor microstructures
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films