High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
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16 results for S. Siddiqui
High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
- S. Siddiqui
- R. Galatage
- et al.
- 2020
- Microelectronic Engineering
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts
- A. Carr
- B. Peethala
- et al.
- 2017
- Microelectronic Engineering
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures
- B. Peethala
- F. Mont
- et al.
- 2016
- Microelectronic Engineering