Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen TemperatureJohannes M. C. StorkDavid L. Harameet al.1989IEEE T-ED
VIA-6 Picosecond Optical Detection of Longitudinal Spatial Hole Burning in an AlGaAs Semiconductor LaserHarley K. Heinrich1989IEEE T-ED
Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits—part II: Non-threshold logic circuitsC.T. Chuang1989IEEE T-ED
IA-1 Imaging and Manipulating Molecules with the Scanning Tunneling MicroscopeJohn S. Foster1989IEEE T-ED
The Effects of X-Rays on p-n Junction Leakage CurrentsDenny D. TangEdward Hackbarthet al.1989IEEE T-ED
The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar TransistorsDenny Duan-Lee TangTze-Chiang Chenet al.1989IEEE T-ED
Frequency Response of Bipolar Junction Transistors after Electron-Beam irradiationKeith A. Jenkins1989IEEE T-ED
A Device Model for the Amorphous-Silicon Staggered-Electrode Thin-Film TransistorAshutosh Kotwal1989IEEE T-ED
On the Low-Temperature Static and Dynamic Properties of High-Performance Silicon Bipolar TransistorsJohn D. CresslerDenny D. Tanget al.1989IEEE T-ED