Conference paper
On-chip real-time power supply noise detector
Anuja Sehgal, Peilin Song, et al.
ESSCIRC 2006
The effect of electron-beam irradiation on the frequency response of modern bipolar transistors has been measured. The electron energies used are typical of those used in e-beam lithography. While the current gain of the transistors at dc is sharply reduced, the high-frequency response is virtually unchanged. This result demonstrates that the frequency response is limited by the base transit line. © 1989 IEEE
Anuja Sehgal, Peilin Song, et al.
ESSCIRC 2006
Keith A. Jenkins, Barry P. Linder
IEEE Electron Device Letters
Stas Polonsky, Keith A. Jenkins
IEEE Electron Device Letters
Keith A. Jenkins, John D. Cressler
IEEE T-ED