Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gateK. HensonH. Buet al.2008IEDM 2008
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltagesShu-Jen HanXinlin Wanget al.2008IEDM 2008
Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlationXiaojun YuShu-Jen Hanet al.2008IEDM 2008
Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devicesZhihong ChenJoerg Appenzeller2008IEDM 2008
Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniquesRyosuke IijimaMariko Takayanagi2008IEDM 2008