MOSFET performance scaling: Limitations and future optionsDimitri A. AntoniadisAli Khakifirooz2008IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bondingF. LiuR.R. Yuet al.2008IEDM 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressorB. YangR. Takalkaret al.2008IEDM 2008