Engineering the electronic defect bands at the Si1-xGex/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si1-xGex pFETs
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2016
- IEDM 2016
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16 results at IEDM 2016
Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs
- Heinz Schmid
- D. Cutaia
- et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Contact resistivities in gamma-valley materials
- Paul Solomon
- 2016
- IEDM 2016
Comprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Air spacer for 10nm FinFET CMOS and beyond
- K. Cheng
- C. Park
- et al.
- 2016
- IEDM 2016