Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization schemeHsinyu TsaiHiroyuki Miyazoeet al.2014IEDM 2014
Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanesBahman HekmatshoarAli Afzali-Ardakani2014IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 vYanning SunAmlan Majumdaret al.2014IEDM 2014