Low-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2007
- IEEE Transactions on Electron Devices
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Random dopant fluctuation in limited-width FinFET technologies
- Meng-Hsueh Chiang
- Jeng-Nan Lin
- et al.
- 2007
- IEEE Transactions on Electron Devices
Device-optimization technique for robust and low-power FinFET SRAM design in NanoScale era
- Aditya Bansal
- Saibal Mukhopadhyay
- et al.
- 2007
- IEEE Transactions on Electron Devices
Understanding Coulomb effects in nanoscale Schottky-barrier-FETs
- Klaus Michael Indlekofer
- Joachim Knoch
- et al.
- 2007
- IEEE Transactions on Electron Devices
The impact of device footprint scaling on high-performance CMOS logic technology
- Jie Deng
- Keunwoo Kim
- et al.
- 2007
- IEEE Transactions on Electron Devices
Base charge dynamics of abrupt base-emitter junction HBTs and its representation in transistor models
- B. Sheinman
- D. Ritter
- 2007
- IEEE Transactions on Electron Devices
Low thermal budget processing for sequential 3-D IC fabrication
- Bipin Rajendran
- Rohit S. Shenoy
- et al.
- 2007
- IEEE Transactions on Electron Devices
An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures
- Jiahui Yuan
- John D. Cressler
- et al.
- 2007
- IEEE Transactions on Electron Devices
Modeling of variation in submicrometer CMOS ULSI technologies
- Scott K. Springer
- Sungjae Lee
- et al.
- 2006
- IEEE Transactions on Electron Devices
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices