Factors controlling pattern formation in chemically amplified resists at sub-100 nm dimensions
- W.D. Hinsberg
- F.A. Houle
- et al.
- 1999
- J. Photopolym. Sci. Tech.
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68 results at J. Photopolym. Sci. Tech.
Investigation of deep UV resists by NMR: Residual casting solvents, chemistries, and PAG decomposition in film
- Hiroshi Ito
- Mark Sherwood
- 1999
- J. Photopolym. Sci. Tech.
IBM 193nm semiconductor resist: Material properties, resist characteristics and lithographic performance
- P. Rao Varanasi
- Ann Marie Mewherter
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Diffusion and distribution studies of photoacid generators: Ion beam analysis in lithography
- Narayan Sundararajan
- Christopher F. Keimel
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Evolution and progress of deep uv resist materials
- Hiroshi Ito
- 1998
- J. Photopolym. Sci. Tech.
Optical properties of polyalicyclic polyimides
- Toshihiko Matsumoto
- Claudius Feger
- 1998
- J. Photopolym. Sci. Tech.
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Dissolution kinetics and PAG interaction of phenolic resins in chemically amplified resists
- Hiroshi Ito
- Debra-Fenzel Alexander
- et al.
- 1997
- J. Photopolym. Sci. Tech.