Comparison of electromigration behaviors of SnAg and SnCu solders
- Minhua Lu
- Da-Yuan Shih
- et al.
- 2009
- IRPS 2009
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11 results at IRPS 2009
TDDB failure distribution of metal gate / high-k CMOS devices on SOI substrates
- A. Kerber
- E. Cartier
- et al.
- 2009
- IRPS 2009
Mapping systematic and random process variations using light emission from off-state leakage
- Franco Stellari
- Peilin Song
- et al.
- 2009
- IRPS 2009
The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects
- R. Filippi
- P.-C. Wang
- et al.
- 2009
- IRPS 2009
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
On the contribution of line-edge roughness to intralevel TDDB lifetime in low-k dielectrics
- J.R. Lloyd
- X.-H. Liu
- et al.
- 2009
- IRPS 2009
Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks
- T. Nigam
- A. Kerber
- et al.
- 2009
- IRPS 2009
Effects of photoinduced carrier injection on time-dependent dielectric breakdown
- J.M. Atkin
- R.B. Laibowitz
- et al.
- 2009
- IRPS 2009
Stress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress
- Eduard Cartier
- Andreas Kerber
- 2009
- IRPS 2009
Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- IRPS 2009