Carbon nanotube electronics
- Phaedon Avouris
- Joerg Appenzeller
- et al.
- 2002
- IEDM 2002
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17 results at IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
The effective drive current in CMOS inverters
- M.H. Na
- E. Nowak
- et al.
- 2002
- IEDM 2002
Charge trapping in high K gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2002
- IEDM 2002
Power-constrained device and technology design for the end of scaling
- David J. Frank
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
- S.E. Laux
- A. Kumar
- et al.
- 2002
- IEDM 2002
Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors
- J. Appenzeller
- J. Knoch
- et al.
- 2002
- IEDM 2002
A functional FinFET-DGCMOS SRAM cell
- E. Nowak
- B. Rainey
- et al.
- 2002
- IEDM 2002
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002