Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005
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12 results at ECS Meeting 2005
Characterization of ultra thin SOI and SSOI substrates: Defect and strain analysis
- S.W. Bedell
- H.J. Hovel
- et al.
- 2005
- ECS Meeting 2005
Germanium-on-Si MOSFETS with HFO 2 gate dielectric
- J.P. Donnelly
- J. Chen
- et al.
- 2005
- ECS Meeting 2005
High performance SOI device options
- Shih-Fen Huang
- 2005
- ECS Meeting 2005
Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence
- C. Coïa
- C. Lavoie
- et al.
- 2005
- ECS Meeting 2005
Strain engineering for silicon CMOS technology
- D.K. Sadana
- S.W. Bedell
- et al.
- 2005
- ECS Meeting 2005
Effect of surface nitridation on the Ge/HfO2 interface
- R. Garg
- D. Misra
- et al.
- 2005
- ECS Meeting 2005
Materials interaction at the nanoscale in high-k metal gate stacks: The role of oxygen
- S. Guha
- E.J. Preisler
- et al.
- 2005
- ECS Meeting 2005
A study of negative bias temperature instability (NBTI) in pFETs
- Sufi Zafar
- James Stathis
- et al.
- 2005
- ECS Meeting 2005
Metal-organic atomic layer deposition of metals for applications in interconnect technology
- O. Van Der Straten
- S.M. Rossnagel
- et al.
- 2005
- ECS Meeting 2005