HEATING EFFECT IN HIGHLY CONDUCTING MATERIALS DURING PLASMA ETCHING.Y.H. LeeM. Chen1983ECS Meeting 1983
TEM STUDY OF THE EFFECT OF ACCELERATORS ON Pd-Sn COLLOIDAL CATALYSTS AND ON THE INITIATION OF ELECTROLESS Cu DEPOSITION ON EPOXY.J. HarkansJ. Kimet al.1983ECS Meeting 1983
STRUCTURAL CHARACTERISTICS OF CHEMISORBED LEAD ON SINGLE CRYSTAL COPPER SURFACES.D.L. RathDieter M. Kolbet al.1983ECS Meeting 1983
STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF//4/H//2 REACTIVE ION ETCHING.G.S. OehrleinR.M. Trompet al.1983ECS Meeting 1983
TEMPERATURE DEPENDENT RESISTIVITY OF THIN FILMS OF NITRIDES OF Zr AND Hf; EFFECT OF NITROGEN CONTENT.L. Krusin-Elbaum1983ECS Meeting 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.T.O. SedgwickS. Cohenet al.1983ECS Meeting 1983
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.B.J. GinsbergM. Arienzoet al.1983ECS Meeting 1983
IN SITU DOPED SILICON VIA LPCVD: INTERACTIONS OF THE DOPANT/SILANE/SILICON SURFACE SYSTEM.B.S. MeyersonM.L. Yu1983ECS Meeting 1983