J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-μm silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are -45 and -9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. The amplifier draws 53 mA from a 1.5-V supply. The measured on-wafer noise figure is 10 dB, while the input-referred third-order intercept point is -7.8 dBm. The results demonstrate that 0.1-μm CMOS technology may be used for 20-GHz RF applications and suggest even higher operating frequencies and better performance for further scaled technologies.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Imran Nasim, Melanie Weber
SCML 2024
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010