G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-μm silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are -45 and -9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. The amplifier draws 53 mA from a 1.5-V supply. The measured on-wafer noise figure is 10 dB, while the input-referred third-order intercept point is -7.8 dBm. The results demonstrate that 0.1-μm CMOS technology may be used for 20-GHz RF applications and suggest even higher operating frequencies and better performance for further scaled technologies.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983