Darryl R. Freedman, Stanley E. Schuster, et al.
IEEE JSSC
This paper describes a 64K CMOS RAM with ECL interfaces having access times of 6.2 ns at room temperature and, with a CMOS process specifically optimized for low-temperature operation, 3.5 ns at liquid nitrogen (LN) temperature. The CMOS processes feature a 0.5-μm L, self-aligned TiSi, double-level metal, and an average minimum feature size of 1.35 μm. Circuits key to high-speed operation are described with emphasis on low power and safe operation. Unique aspects of LN-temperature operation are discussed including circuit/device interactions, the impact of velocity saturation effects on channel length, temperature and power supply sensitivities, and the characteristics of the ECL-to-CMOS receiver circuits. © 1989 IEEE
Darryl R. Freedman, Stanley E. Schuster, et al.
IEEE JSSC
Alper Buyuktosunoglu, David H. Albonesi, et al.
LPED 2002
John Barth, William R. Reohr, et al.
IEEE Journal of Solid-State Circuits
David M. Brooks, Pradip Bose, et al.
IEEE Micro