Body charge related transient effects in floating body SOI NMOSFET's
- J. Gautier
- Keith A. Jenkins
- et al.
- 1995
- IEDM 1995
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90 results for Jack Y. C. Sun
Effect of the back gate conduction on 0.25 μm SOI devices
- J.L. Pelloie
- D.K. Sadana
- et al.
- 1994
- IEDM 1994
MODELING ON INCREASE OF N-P-N AND P-N-P CURRENT GAIN BY HYDROGEN ELECTROMIGRATION IN POLYSILICON EMITTERS
- J. Zhao
- G.P. Li
- et al.
- 1993
- IEDM 1993
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
A 5Gb/s 16×16 Si-bipolar crosspoint switch
- Hyun Shin
- James Warnock
- et al.
- 1992
- ISSCC 1992
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Low thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991