Karan Bhatia, Keunwoo Kim, et al.
IEEE SOI 2006
A prototype design of a 2.7-3.3-V 14.5-mA SiGe direct-conversion receiver IC for use in third-generation wide-band code-division multiple-access (3G WCDMA) mobile cellular systems has been completed and measured. The design includes a by-passable low-noise amplifier (LNA), a quadrature downconverter, a local-oscillator frequency divider and quadrature generator, and variable-gain baseband amplifiers integrated on chip. The design achieves a cascaded, LNA-referred noise figure (including an interstage surface acoustic wave filter) of 4.0 dB, an in-band IIP3 of - 18.6 dBm, and local-oscillator leakage at the LNA input of - 112 dBm. The static sensitivity performance of the receiver IC is characterized using a software baseband processor to compute link bit-error rate.
Karan Bhatia, Keunwoo Kim, et al.
IEEE SOI 2006
Mohan K. Chirala, Brian A. Floyd
IMS 2006
Anup P. Jose, Keith A. Jenkins, et al.
VTS 2005
Brian A. Floyd, Chih-Ming Hung, et al.
IEEE Journal of Solid-State Circuits