Analysis of the Impact of Gate-Body Signal Phase on DTMOS Inverters in 0.13μm PD-SOI

Alan J. Drake; Noah Zamdmer; Kevin J. Nowka; Richard B. Brown

IEEE International SOI Conference 2003

Conference paper

06 Nov 2003

Analysis of the Impact of Gate-Body Signal Phase on DTMOS Inverters in 0.13μm PD-SOI

Abstract

The impact of gate-body signal phase on dynamic-threshold transistors (DTMOS) inverters in 0.13 μm PD-SOI was analyzed. Measurements showed that even at low voltages, DTMOS is slower and uses more energy than floating-body (FB) transistors. It was found that positive body-conditioned PS-DTMOS is faster than FB transistors.

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Abstract

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