J. Tersoff
Applied Surface Science
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
J. Tersoff
Applied Surface Science
Kigook Song, Robert D. Miller, et al.
Macromolecules
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
T.N. Morgan
Semiconductor Science and Technology