Julien Autebert, Aditya Kashyap, et al.
Langmuir
The generation of interface states at the Si/SiO2-interface caused by atomic hydrogen, H0, from a remote hydrogen plasma has been studied. It is found that H0 produces large numbers of interface-states, irrespective of the oxide thickness and the substrate orientation. The interface-state density is found to increase linearly with the H0-dose over a wide range. The rate at which the interface-states are created appears to be thermally activated with an activation energy of ⋍ 200 meV. The rate increases with decreasing oxide thickness, indicating that the generation may be limited in part by the H0 diffusion to the interface. The Si (1 1 1) interface is found to degrade faster than the Si (1 0 0) interface. © 1995, All rights reserved.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Michiel Sprik
Journal of Physics Condensed Matter
T.N. Morgan
Semiconductor Science and Technology
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials