Electron effective mass enhancement in ultrathin gate-oxide Si-MOSFETs
- M. Dragosavac
- D.J. Paul
- et al.
- 2004
- ICPS Physics of Semiconductors 2004
Publications
Date
Featured collections
Popular topics
51 results for D.A. Buchanan
Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission
- D. Felnhofer
- E. Gusev
- et al.
- 2005
- INFOS 2005
Electron effective mass in ultrathin oxide silicon MOSFET inversion layers
- M. Dragosavac
- D.J. Paul
- et al.
- 2005
- Semiconductor Science and Technology
Interface reactions in ZrO 2 based gate dielectric stacks
- M. Gribelyuk
- A.C. Callegari
- et al.
- 2002
- Journal of Applied Physics
Ultrathin high-K metal oxides on silicon: Processing, characterization and integration issues
- E. Gusev
- E. Cartier
- et al.
- 2001
- Microelectronic Engineering
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- Tiezhong Ma
- Stephen A. Campbell
- et al.
- 2001
- IEEE Transactions on Electron Devices
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
- Ryan C. Smith
- Noel Hoilien
- et al.
- 2000
- JES
Scaling the gate dielectric: materials, integration, and reliability
- D.A. Buchanan
- 1999
- IBM J. Res. Dev