Mark W. Dowley
Solid State Communications
Ge2Sb2Te5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied with time-of-flight elastic recoil detection analysis (TOF-ERDA) and energy dispersive x-ray analysis. Phase change properties of the films were characterised by high-temperature X-ray diffraction and laser based crystallization measurements. Crystallization properties of ALD GST were found to be similar to sputter-deposited films. © 2009 Elsevier B.V. All rights reserved.
Mark W. Dowley
Solid State Communications
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
K.N. Tu
Materials Science and Engineering: A
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry