Conference paper
Reduced Cu interface diffusion by CoWP surface coating
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
Electromigration in 0.23 μm wide Cu dual-damascene lines connected to W underlayers has been investigated. Void growth at the vicinity of the cathode end of the line/via was determined to be the cause of the line failure. The distribution of failure lifetimes was found to be closely represented by a two-log-normal function. Focused ion beam analysis showed that the two failure populations had distinct difference in the location of the void growth.
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
C.-K. Hu, K.Y. Lee, et al.
Thin Solid Films
J.M.E. Harper, C. Cabral Jr., et al.
Journal of Applied Physics
R.F. Liu, C.-K. Hu, et al.
Journal of Applied Physics