Conference paper
Thermal stress control in Cu interconnects
Chih-Chao Yang, Baozhen Li, et al.
IITC/AMC 2014
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm. © 2011 IEEE.
Chih-Chao Yang, Baozhen Li, et al.
IITC/AMC 2014
C.-C. Yang, F. Baumann, et al.
Microelectronic Engineering
F. Chen, Michael Shinosky, et al.
IRPS 2011
I.C. Noyan, S. Kaldor, et al.
Review of Scientific Instruments