J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Soft-x-ray photoemission studies of Al and Au on molecular-beam epitaxially grown GaAs(100) vicinal surfaces at low temperature demonstrate orientation-dependent interface electronic properties and chemistry. Misorientation of the substrate introduces both electrically and chemically active sites. With increasing misorientation-induced step-site density, the Fermi level at the Al/GaAs(100) interface moves toward the midgap. For the Au/GaAs(100) interface, substrate misorientation has only a minor effect on the electronic barrier height. The chemically active sites modify the extent of interface chemistry. A self-consistent electrostatic calculation of the misorientation-dependent barrier height for Al interfaces indicates a nearly one-to-one correlation between interface states and step-induced bonding sites. These results emphasize the importance of an atomic-scale interface bonding structure in the Schottky-barrier formation. © 1992 The American Physical Society.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Imran Nasim, Melanie Weber
SCML 2024
J. Tersoff
Applied Surface Science