Falta et al. reply [1]
- J. Falta
- R.M. Tromp
- et al.
- 1993
- Physical Review Letters
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69 results for P.D. Kirchner
Structure and composition of GaAs(001) surfaces
- J. Falta
- R.M. Tromp
- et al.
- 1992
- Physical Review Letters
Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
- E.A. Eklund
- P.D. Kirchner
- et al.
- 1992
- Physical Review Letters
InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces
- S. Chang
- L.J. Brillson
- et al.
- 1990
- Physical Review Letters
Amorphization and conductivity of silicon and germanium induced by indentation
- D.R. Clarke
- M.C. Kroll
- et al.
- 1988
- Physical Review Letters
Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy
- M.D. Pashley
- K.W. Haberern
- et al.
- 1988
- Physical Review Letters
An In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE Electron Device Letters
Temperature-Dependent Composition, Ordering, and Band Bending at Gap(100) Surfaces
- C.L. Lin
- L.J. Brillson
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films