PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
PaperCarbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursorsT.J. De Lyon, J. Woodall, et al.Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
PaperVolatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxyP.D. Kirchner, J. Woodall, et al.Applied Physics Letters
