Naga Ayachitula, Melissa Buco, et al.
SCC 2007
The left side and right side line edge roughnesses (LER) of a line are compared for different conditions, such as through pitch, through critical dimension (CD), from horizontal to vertical line direction, from litho to etch. The investigation shows that the left and right side LER from lithography process are the same, however, the metrology can cause a 4-25% increase in the measured right side LER. The LER difference is related to the CDSEM e-beam scan direction.
Naga Ayachitula, Melissa Buco, et al.
SCC 2007
Daniel J. Costello Jr., Pierre R. Chevillat, et al.
ISIT 1997
Martin Charles Golumbic, Renu C. Laskar
Discrete Applied Mathematics
Robert F. Gordon, Edward A. MacNair, et al.
WSC 1985