William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993