R. Ghez, J.S. Lew
Journal of Crystal Growth
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films