Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures

P. Gueret; N. Blanc; R. Germann; H. Rothuizen

doi:10.1088/0268-1242/7/3B/120

Semiconductor Science and Technology

Paper

01 Jan 1999

Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures

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Abstract

The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.

Conference paper