C.A. Micchelli, W.L. Miranker
Journal of the ACM
In order to tackle the CMOS contact resistance bottleneck, we developed a contact cavity shaping process that leverages a Reactive Ion Etching (RIE) technology, and a selective highly doped SiGe epitaxial process allowing an active boron doping level of 2E21 at.cm-3. By co-optimizing these processes in the contact module on 300mm wafers, we demonstrate a record low transistor contact resistance of 11 Ω. μm of Weff with corresponding effective ρc of 5.2× 10-10 Ω.cm2, which translates into a device Ieff performance gain of 44/19% (median/leading edge).
C.A. Micchelli, W.L. Miranker
Journal of the ACM
Saurabh Paul, Christos Boutsidis, et al.
JMLR
Joxan Jaffar
Journal of the ACM
Kenneth L. Clarkson, Elad Hazan, et al.
Journal of the ACM