J.A. Kash, E. Mendez, et al.
Applied Physics Letters
The conduction-band discontinuity (ΔEc) between In 0.53Ga0.47As and In0.52Al0.48As is determined by current-voltage measurements on n+-InGaAs/InAlAs/n --InGaAs capacitors. Current is found to be dominated by thermionic emission conduction down to 180 K. Barrier heights are determined from the slope of ln(J/T2) vs 1/T where good straight-line fits are obtained in the thermionic emission range. After correcting for the Fermi level a conduction-band discontinuity of 0.51±0.04 eV is obtained representing 70% of the total band-gap discontinuity. Furthermore, capacitance-voltage measurements are fit to classical capacitance-voltage theory and show that no charge is present in the InAlAs insulating layer.
J.A. Kash, E. Mendez, et al.
Applied Physics Letters
T.W. Hickmott, P. Solomon, et al.
Applied Physics Letters
P. Solomon, T.W. Hickmott, et al.
Applied Physics Letters
Y.L. Sun, R. Fischer, et al.
Thin Solid Films