M.V. Fischetti, Z. Ren, et al.
Journal of Applied Physics
Current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics have been measured for n+-GaAs-undoped Ga 0.6Al0.4 As-GaAs capacitors over a temperature range of 80-350 K. At low temperatures the structure behaves like a semiconductor- insulator-semiconductor diode with interface barrier heights of 0.38 and 0.40 eV for the bottom and top interfaces, respectively. The I-V curves exhibit a rectifying behavior due to the formation of a substrate depletion layer, and the C-V curves show the formation of the depletion layer under reverse bias as well as an accumulation layer containing >1012 electrons/cm2, in forward bias. The C-V curves agree closely with standard theory for SIS structures assuming Fermi-Dirac statistics for electrons in the accumulation layer, within an unaccounted-for voltage shift of 0.16 V.
M.V. Fischetti, Z. Ren, et al.
Journal of Applied Physics
P. Solomon
DRC 2001
M.I. Nathan, P.M. Mooney, et al.
Surface Science
P. Solomon
Journal of Applied Physics