The effects of plasma exposure on low-k dielectric materials
J.L. Shohet, H. Ren, et al.
SPIE Advanced Lithography 2012
More and more high- and low-k dielectrics are used in microfabrication today. However, as is well known, these materials are easily damaged during processing or during operation in a device. Sources of damage include plasma and/or VUV exposure, water uptake, free radicals as well as cosmic rays. A description of the damage effects on dielectrics from water uptake, plasma and/or VUV exposure, and neutron exposure is presented. Although the results for neutron exposure are presented for a high-k dielectric, HfO2, they can easily be extended to low-k dielectrics. © 2014 The Electrochemical Society.
J.L. Shohet, H. Ren, et al.
SPIE Advanced Lithography 2012
H. Sinha, H. Ren, et al.
Journal of Applied Physics
M.T. Nichols, Weiyi Li, et al.
Journal of Applied Physics