H. Rupprecht, C.Z. Lemay
Journal of Applied Physics
Chemical sectioning of p-type surface layers on silicon is described. The technique is applied to measure the impurity concentration and the defect concentration vs depth in shallow boron-diffused surface layers using electrical measurements and x-ray diffraction microscopy. © 1966 The American Institute of Physics.
H. Rupprecht, C.Z. Lemay
Journal of Applied Physics
M.H. Pilkuhn, H. Rupprecht
Journal of Applied Physics
H. Rupprecht, J. Woodall, et al.
Applied Physics Letters
M.H. Pilkuhn, H. Rupprecht
Journal of Applied Physics