Paper
GaAs sees the light
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time. © 1991 IEEE
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
S.Y. Lin, G. Arjavalingam
Journal of the Optical Society of America B: Optical Physics
A. Deutsch, G. Arjavalingam, et al.
IEEE Microwave and Guided Wave Letters
J.D. Crow, L. Comerford, et al.
Proceedings of SPIE 1989