Takeshi Nogami, C. Penny, et al.
IEDM 2012
Conference paper
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
Abstract
In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC
Related
N. Inoue, F. Ito, et al.
IITC 2013
J. Zhang, S. Pancharatnam, et al.
IEDM 2019
V. McGahay, G. Bonilla, et al.
IITC 2006