PaperBias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistorsFrank R. Libsch, Jerzy KanickiApplied Physics Letters
PaperStretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitrideJerzy Kanicki, M. Sankaran, et al.Applied Physics Letters
PaperBias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?A. Gelatos, Jerzy KanickiApplied Physics Letters
PaperElectron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride filmsW.L. Warren, Jerzy Kanicki, et al.Journal of Applied Physics
