E.S. Harmon, M.R. Melloch, et al.
Applied Physics Letters
The variation of minority electron mobility with doping density in p +-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1×1018 and 8×1019 cm-3 show the mobility decreasing from 1950 cm2 V-1 s-1 at 1×1018 cm-3 to 1370 cm2 V-1 s-1 at 9×1018 cm-3. For the doping range 9×1018-8×1019 cm-3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V-1 s-1 at 8×1019 cm-3 is about three times higher than the measured value at 9×1018 cm-3. These results confirm and extend recent transistor-based measurements and are in accord with recent theoretical predictions that attribute the increase in minority electron mobility in p+-GaAs to reductions in plasmon and carrier-carrier scattering at high hole densities.
E.S. Harmon, M.R. Melloch, et al.
Applied Physics Letters
M.R. Melloch, N. Otsuka, et al.
Journal of Applied Physics
M.R. Melloch, K. Mahalingam, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
R.J. Matyi, M.R. Melloch, et al.
Journal of Crystal Growth