H. Shen, S.H. Pan, et al.
Applied Physics Letters
Paper
GaAs sees the light
Abstract
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
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