J.J. Rosenberg, M. Benlamri, et al.
IEEE Electron Device Letters
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
J.J. Rosenberg, M. Benlamri, et al.
IEEE Electron Device Letters
R.M. Feenstra, E.T. Yu, et al.
Applied Physics Letters
Alan C. Warren, J. Woodall, et al.
Applied Physics Letters
Frank Stern, J. Woodall
Journal of Applied Physics