Conference paper
New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
The non-thermal, pulsed plasma model of laser annealing was experimentally tested by comparing the effects of 30 ns and 1 μs laser pulses on silicon on sapphire films, impinging from both the front and rear surfaces. The energy density needed to anneal the films and the qualitative behavior of thermal shock damages are in accordance with the simple heating model and inconsistent with the non-thermal model. © 1980.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
E.S. Yang, C.M. Wu, et al.
Applied Physics Letters
R. Tsu, L.L. Chang, et al.
Physical Review Letters
R.T. Hodgson
The Journal of Chemical Physics