When are transmission-line effects important for on-chip interconnections
- A. Deutsch
- G.V. Kopcsay
- et al.
- 1997
- ECTC 1997
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46 results for G.A. Sai-Halasz
EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
MINORITY CARRIER TRANSPORT IN SILICON.
- D.D. Tang
- F. Fang
- et al.
- 1985
- IEDM 1985
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
Device-grade ultra-shallow junctions fabricated with antimony
- George A. Sai-Halasz
- H.B. Harrison
- 1986
- IEEE Electron Device Letters
Spreading Resistance in Submicron MOSFET's
- G. Baccarani
- G.A. Sai-Halasz
- 1983
- IEEE Electron Device Letters
Cosmic Ray Induced Soft Error Rate in VLSI Circuits
- G.A. Sai-Halasz
- 1983
- IEEE Electron Device Letters
Projected Life-Times of Circuits in Krypton 85 Contaminated Packages
- G.A. Sai-Halasz
- J.M. Aitken
- 1982
- IEEE Electron Device Letters