S. Tiwari, J.J. Welser, et al.
DRC 1998
Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are related to a percolation model for the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown. © 1997 American Institute of Physics.
S. Tiwari, J.J. Welser, et al.
DRC 1998
S. Lombarde, F. Palumbo, et al.
ICICDT 2004
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B