Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Ming L. Yu
Physical Review B