G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.