Conference paper
Reduced Cu interface diffusion by CoWP surface coating
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), so called high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65X higher drive current (VDS= -1.6 V and VGVT = -2 V), and a 70X lower off-state leakage (VDS = -1.6 V).
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
L.J. Huang, J.O. Chu, et al.
VLSI Technology 2001
H. Kawasaki, V.S. Basker, et al.
IEDM 2009
G. Dehlinger, J. Schaub, et al.
LEOS 2005