U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
N- and p-MOSFETs have been fabricated in strained Si on SiGe on insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-On-Insulator (SGOI) substrates. Mobility enhancement of 46% for electrons and 60-80% for holes (for 20%-25% Ge content, respectively) has been demonstrated in SSOI MOSFETs. This could lead to next generation device performance enhancement.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing
M. Arafa, P. Fay, et al.
Electronics Letters