The DX centre
T.N. Morgan
Semiconductor Science and Technology
A sub-micron trenching technique has been developed to fabricate Aharonov-Bohm ring structures in a high mobility Si/Si0.7Ge0.3 modulation doped heterostructure. Scanning electron-beam lithography is used to expose the area defining the ring contour, and reactive-ion etching follows to recess this area, thus forcing electrons to flow inside the ring. Conductance in the Si/SiGe rings exhibits oscillations in magnetoresistance, which is the first observation of this effect in Si-based materials. The amplitude of the oscillations is comparable to that of similar devices on similar mobility GaAs/GaAlAs heterostructures. © 1995 Elsevier Science B.V. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
Kigook Song, Robert D. Miller, et al.
Macromolecules
Michiel Sprik
Journal of Physics Condensed Matter
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials