F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
A sub-micron trenching technique has been developed to fabricate Aharonov-Bohm ring structures in a high mobility Si/Si0.7Ge0.3 modulation doped heterostructure. Scanning electron-beam lithography is used to expose the area defining the ring contour, and reactive-ion etching follows to recess this area, thus forcing electrons to flow inside the ring. Conductance in the Si/SiGe rings exhibits oscillations in magnetoresistance, which is the first observation of this effect in Si-based materials. The amplitude of the oscillations is comparable to that of similar devices on similar mobility GaAs/GaAlAs heterostructures. © 1995 Elsevier Science B.V. All rights reserved.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
M. Hargrove, S.W. Crowder, et al.
IEDM 1998