PaperMetal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structureJ. Freeouf, J. Woodall, et al.Applied Physics Letters
PaperHigh-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
Conference paperCharacterization of mev ion-implanted gainas/gaas using x-ray and raman techniquesChu R. Wie, K. Xie, et al.Proceedings of SPIE 1989
PaperTemperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum wellY.S. Huang, H. Qiang, et al.Journal of Applied Physics
